Effect of substrate temperature on migration of Si in planar‐doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100225
Reference11 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
3. Subband physics for a “realistic” δ-doping layer
4. Spatial localization of impurities in δ‐doped GaAs
5. GaAs structures with electron mobility of 5×106cm2/V s
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