Dimerization induced Be segregation in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108744
Reference13 articles.
1. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
2. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
3. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study
4. Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy
5. Kinetics of ideal dopant segregation in GaAs
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1. (In,Ga)As/GaP electrical injection quantum dot laser;Applied Physics Letters;2014-01-06
2. Many-body and disorder effects in the optical spectra of extremely high density Be δ-doped GaAs;Solid State Communications;1996-11
3. Time‐resolved study of carrier capture and recombination in monolayer Be δ‐doped GaAs;Applied Physics Letters;1995-07-24
4. In segregation at the growth front of the GaAs/In0.30Ga0.70As (100) heterojunction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
5. Surfactant assisted growth of 850 nm light modulators;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
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