OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
2. Double‐heterostructure GaAs‐AlxGa1−xAs [110]p‐n‐junction‐diode modulator
3. Electro-optic polarisation convertor on (110) InP
4. Anisotropic optical properties of (110)-oriented quantum wells
5. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
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1. Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures;Materials Advances;2022
2. Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy;Crystal Growth & Design;2021-06-10
3. In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process;ACS Omega;2018-11-01
4. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
5. Planar n-SI-n heterostructure athermal InP (110) optical modulator;Optics Express;2014-10-14
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