Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures-Reference-Cited by-同舟云学术

Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures

Published:2022 Issue:12 Volume:3 Page:5034-5042
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Hudait Mantu K.¹^ORCID,Johnston Steven W.²

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Abstract

Schematic representation of orientation specific Ge/AlAs/GaAs and InGaAs/InP fin transistor architecture and their carrier lifetimes.

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00260D

Reference59 articles.

1. Considerations for Ultimate CMOS Scaling

2. Germanium CMOS potential from material and process perspectives: Be more positive about germanium

3. Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles study

4. Metal work function engineering on epitaxial (100)Ge and (110)Ge metal-oxide-semiconductor devices

5. Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal–Oxide–Semiconductor Devices on AlAs/GaAs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetics of Space-Confined Inverse Temperature Crystallization: Gradients Enlarge Thin Perovskite Single Crystals;ACS Materials Letters;2024-07-12

2. Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm;Advanced Functional Materials;2024-04-18

3. GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation;Nanoscale;2024

4. High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States;ACS Applied Electronic Materials;2023-08-17

5. Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al₂O₃;ACS Applied Electronic Materials;2023-05-24