Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon melt
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Silicon crystal growth in a cusp magnetic field
2. Homogeneous increase in oxygen concentration in Czochralski silicon crystals by a cusp magnetic field
3. Effect of a shaped magnetic field on Czochralski silicon growth
4. Oxygen transport in magnetic czochralski growth of silicon with a non-uniform magnetic field
5. Oxygen solubility and its temperature dependence in a silicon melt in equilibrium with solid silica
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3. Effect of cusp magnetic field on the turbulent melt flow and crystal/melt interface during large-size Czochralski silicon crystal growth;International Journal of Thermal Sciences;2021-12
4. Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique;Silicon;2020-09-14
5. The influence mechanism of melt flow instability on the temperature fluctuation on the crystal/melt interface during Czochralski silicon crystal growth;International Journal of Heat and Mass Transfer;2019-10
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