Diffusion coefficients of carbon, oxygen and nitrogen in silicon melt-Reference-Cited by-同舟云学术

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Diffusion coefficients of carbon, oxygen and nitrogen in silicon melt

Published:2022-02 Issue: Volume:580 Page:126476
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Luo Jinping,Zhou Chenyang,Li Qihang,Cheng Yunjie,Liu Lijun

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference57 articles.

1. Diffusion Coefficients of Impurities in Silicon Melt

2. New Determinations of Diffusion Coefficients for Various Dopants in Liquid Silicon

3. Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

4. Fast growth of thin multi-crystalline silicon ribbons by the RST method

5. Global simulation of coupled oxygen and carbon transport in an industrial directional solidification furnace for crystalline silicon ingots: Effect of crucible cover coating

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1. Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping;Scientific Reports;2024-08-23

2. High temperature evolution of a confined silicon layer;Journal of Applied Physics;2024-06-26

3. Diffusion-Limited Crystal Growth of Gallium Nitride Using Active Machine Learning;Crystal Growth & Design;2024-03-12

4. Molecular Dynamics Study of Silicon Carbide Using an Ab Initio-Based Neural Network Potential: Effect of Composition and Temperature on Crystallization Behavior;The Journal of Physical Chemistry C;2023-11-14

5. A new form of impurity cluster in casting quasi-single crystalline silicon;Journal of Crystal Growth;2022-07

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