The influence mechanism of melt flow instability on the temperature fluctuation on the crystal/melt interface during Czochralski silicon crystal growth-Reference-Cited by-同舟云学术

The influence mechanism of melt flow instability on the temperature fluctuation on the crystal/melt interface during Czochralski silicon crystal growth

Published:2019-10 Issue: Volume:142 Page:118463
ISSN:0017-9310
Container-title:International Journal of Heat and Mass Transfer
language:en
Short-container-title:International Journal of Heat and Mass Transfer

Author:

Ding Junling,Liu Lijun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics

Reference35 articles.

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4. Convective phenomena in large melts including magnetic fields;Muiznieks;J. Cryst. Growth,2007

5. Large-eddy simulation of melt turbulence in a 300-mm Cz–Si crystal growth;Liu;Int. J. Heat Mass Transf.,2012

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