Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference55 articles.
1. OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications
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2. Study of the Growth and Dislocation Blocking Mechanisms in InxGa1−xAs Buffer Layer for Growing High-Quality In0.5Ga0.5P, In0.3Ga0.7As, and In0.52Ga0.48As on Misoriented GaAs Substrate for Inverted Metamorphic Multijunction Solar Cell Application;Energy Harvesting and Systems;2014-01-01
3. Study of the incorporation factor (K) and its application to laser diode production;Journal of Crystal Growth;2004-01
4. (Al)GaInP multiquantum well LEDs on GaAs and Ge;Journal of Electronic Materials;2000-01
5. Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition;IEEE Photonics Technology Letters;1997-10
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