Study of the Growth and Dislocation Blocking Mechanisms in InxGa1−xAs Buffer Layer for Growing High-Quality In0.5Ga0.5P, In0.3Ga0.7As, and In0.52Ga0.48As on Misoriented GaAs Substrate for Inverted Metamorphic Multijunction Solar Cell Application-Reference-Cited by-同舟云学术

Study of the Growth and Dislocation Blocking Mechanisms in InxGa1−xAs Buffer Layer for Growing High-Quality In0.5Ga0.5P, In0.3Ga0.7As, and In0.52Ga0.48As on Misoriented GaAs Substrate for Inverted Metamorphic Multijunction Solar Cell Application

Published:2014-01-01 Issue:3-4 Volume:1 Page:
ISSN:2329-8774
Container-title:Energy Harvesting and Systems
language:
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Author:

Nguyen H. Q.,Yu H. W.,Hsu C. H.,Phan V. T. H.,Chang E. Y.

Abstract

AbstractEffects of growth conditions and buffer structures on crystal quality of 1.9-eV In

Publisher

Walter de Gruyter GmbH

Subject

Electrochemistry,Electrical and Electronic Engineering,Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment

Link

https://www.degruyter.com/document/doi/10.1515/ehs-2014-0006/pdf

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