GaInP-AlGaInP-GaAs heterostructures grown by MOVPE at atmospheric pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Feasibility of the LPE Growth of AlxGayIn1-x-yP on GaAs Substrates
2. Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
3. MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasers
4. MOCVD Growth and Characterization of (AlxGa1-x)yIn1-yP/GaAs
5. Organometallic vapor phase epitaxial growth of AlGaInP
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1. (Al)GaInP multiquantum well LEDs on GaAs and Ge;Journal of Electronic Materials;2000-01
2. Compositional dependence of the luminescence ofIn0.49(AlyGa1−y)0.51P alloys near the direct–indirect band-gap crossover;Physical Review B;1996-06-15
3. Semiconductor Lasers—Materials and Devices;Fundamentals of Laser Optics;1994
4. Effects of confined donor states on the optical and transport properties of orderedGaInP2alloys;Physical Review B;1993-09-15
5. Microstructure and cathodoluminescence of MBE-grown (001) InxGa1-xP/GaAs strained-layer heterostructures;Semiconductor Science and Technology;1993-04-01
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