Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy
2. Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs‐GaAsnpnbipolar transistors
3. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
4. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
5. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
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