Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)-Reference-Cited by-同舟云学术

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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

Published:2010-08-20 Issue:37 Volume:22 Page:4140-4145
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Jeongho,Mitchel William C.,Grazulis Lawrence,Smith Howard E.,Eyink Kurt G.,Boeckl John J.,Tomich David H.,Pacley Shanee D.,Hoelscher John. E.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference24 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

3. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

4. Highly conducting graphene sheets and Langmuir–Blodgett films

5. Large-scale pattern growth of graphene films for stretchable transparent electrodes

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