1. GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy;Sekiguchi;Electronics Letters,2008
2. Schmid W, Scherer M, Jäger R, Strauß P, Streubel K, Ebeling K.J. Efficient light-emitting diodes with radial outcoupling taper at 980 and 630 nm emission wavelength, Light-emitting diodes: research manufacturing, and applications V. SPIE Proc., 4278, (San Jose, CA, USA); 2001. p. 109–117.
3. Production MBE for AlGaAs lasers at Rohm electronics;Mizosaki-cho;III-Vs Review,1991
4. Documentation on Sony product SLD6562TL, http://www.i-micronews.com/upload/Rapports/Yole_Flyer_SONY_Laser_Diode.pdf
5. Oosenbrug A, Latta EE, High-power operational stability of 980 nm pump lasers for EDFA applications. LEOS ’94 Conference Proceedings. IEEE, vol. 2; 1994. p. 37–38.