The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxy
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Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE;IEEE Transactions on Electron Devices;2012-07
2. CBr4 and Be heavily doped InGaAs grown in a production MBE system;Journal of Crystal Growth;2005-05
3. Effect of growth rate on surface morphology of heavily carbon-doped InGaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Growth of carbon doping Ga[sub 0.47]In[sub 0.53]As using CBr[sub 4] by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide;Applied Physics Letters;1998-10-26
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