Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102947
Reference10 articles.
1. Gas-Source Molecular Beam Epitaxy
2. Very high tin doping of Ga0.47In0.53As by molecular beam epitaxy
3. Subpicosecond InP/InGaAs heterostructure bipolar transistors
4. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
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1. Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers;Journal of Crystal Growth;2015-09
2. Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides;Applied Physics Letters;2011-06-06
3. Tin-stabilized (1×2) and (1×4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations;Surface Science;2011-05
4. Heteroepitaxy of Antimonides on InP;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
5. Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy;Journal of Applied Physics;2001-02-15
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