Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides-Reference-Cited by-同舟云学术

Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Published:2011-06-06 Issue:23 Volume:98 Page:231908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Laukkanen P.,Punkkinen M. P. J.,Lång J.,Tuominen M.,Kuzmin M.,Tuominen V.,Dahl J.,Adell J.,Sadowski J.,Kanski J.,Polojärvi V.,Pakarinen J.,Kokko K.,Guina M.,Pessa M.,Väyrynen I. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3596702

Reference36 articles.

1. Fundamentals of III-V Semiconductor MOSFETs

2. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

3. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

4. Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy

5. Effects of Si deposition on the properties of Ga-rich (4×6) GaAs (001) surfaces

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