Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy

Published:2000 Issue:4 Volume:18 Page:2100
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hasegawa Hideki,Negoro Noboru,Kasai Seiya,Ishikawa Yasuhiko,Fujikuwa Hajime

Publisher

American Vacuum Society

Subject

General Engineering

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