Synthesis and Characterization of Layered Tin Monoxide Thin Films with Monocrystalline Structure on III-V Compound Semiconductor-Reference-Cited by-同舟云学术

Synthesis and Characterization of Layered Tin Monoxide Thin Films with Monocrystalline Structure on III-V Compound Semiconductor

Published:2013-12-27 Issue:2 Volume:1 Page:1300022
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Laukkanen Pekka¹,Lång Jouko¹,Punkkinen Marko¹,Kuzmin Mikhail¹,Tuominen Marjukka¹,Yasir Muhammad¹,Dahl Johnny¹,Tuominen Veikko¹,Kokko Kalevi¹,Polojärvi Ville²,Salmi Joel²,Korpijärvi Ville-Markus²,Aho Arto²,Tukiainen Antti²,Guina Mircea²,Hedman Hannu-Pekka³,Punkkinen Risto³

Affiliation:

1. Department of Physics and Astronomy; University of Turku; FI-20014 Turku Finland

2. Optoelectronics Research Centre; Tampere University of Technology; FI-33101 Tampere Finland

3. Department of Information Technology; University of Turku; FI-20014 Turku Finland

Funder

National Graduate School in Materials Physics, Solar III-V TEKES project

Turku University Foundation, Finnish Academy of Science and Letters, Academy of Finland

Transnational Access to the Research Infrastructure Program (TARI)

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfaces

2. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

3. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

4. Frontier Orbital Model of Semiconductor Surface Passivation: Dicarboxylic Acids on n- and p-GaAs

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