Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
2. Surface segregation of Sn during MBE of n‐type GaAs established by SIMS and AES
3. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
4. Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy
5. Nucleation effects during MBE growth of Sn-Doped GaAs
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2. The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures;Journal of Crystal Growth;1996-07
3. Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE);Materials Science and Engineering: R: Reports;1995-05
4. The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures;Journal of Crystal Growth;1994-03
5. Low Temperature SiNx as a Sacrificial Layer in Novel Device Fabrication;MRS Proceedings;1993
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