Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference157 articles.
1. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
2. Metalorganic CVD of GaAs in a molecular beam system
3. Chemical beam epitaxy of InP and GaAs
4. C.R. Abernathy, unpublished data.
5. A. Robertson Jr, unpublished data.
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