Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122489
Reference7 articles.
1. Carbon doping of III–V compounds grown by MOMBE
2. Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTs
3. Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications
4. The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures
5. Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide
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1. Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers;Journal of Crystal Growth;2024-10
2. Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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