Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: hydrogen coverage and interfacial abruptness
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. 91 GHz SiGe HBTs grown by MBE
2. Electron resonant tunneling in Si/SiGe double barrier diodes
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4. High hole mobility in SiGe alloys for device applications
5. Normal incidence infrared detector usingp‐type SiGe/Si multiple quantum wells
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