Normal incidence infrared detector usingp‐type SiGe/Si multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107361
Reference10 articles.
1. High‐detectivityD*=1.0×1010cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
2. High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
3. InGaAs/InP long wavelength quantum well infrared photodetectors
4. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
5. Intersubband absorption in Si1−xGex/Si multiple quantum wells
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