Terahertz intersubband transitions in GaAsBi/AlGaAs single quantum well heterostructure
Author:
Funder
Imam Abdulrahman Bin Faisal University
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference65 articles.
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4. Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi;Marko;J. Phys. D Appl. Phys.,2014
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