Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi-Reference-Cited by-同舟云学术

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Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Published:2014-08-01 Issue:34 Volume:47 Page:345103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Marko I P,Ludewig P,Bushell Z L,Jin S R,Hild K,Batool Z,Reinhard S,Nattermann L,Stolz W,Volz K,Sweeney S J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=34/a=345103/pdf

Reference25 articles.

1. The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

2. The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

3. Bismide-alloys for higher efficiency infrared semiconductor lasers

4. Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers

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3. High verticality vapor–liquid–solid growth of GaAs_0.99Bi_0.01 nanowires using Ga–Bi assisted catalytic droplets;Nanoscale Advances;2024

4. Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence;Materials Science in Semiconductor Processing;2023-08

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