Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers
2. High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
3. Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers
4. , , , , , and , Proc. 16th IEEE Indium Phosphide and Related Materials (IPRM) Conference, FA3-1, p. 731 (2004).
5. Optical properties of semiconductor lasers with hydrostatic pressure
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