Bismide-alloys for higher efficiency infrared semiconductor lasers
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5623519/5642632/05642728.pdf?arnumber=5642728
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method;Journal of Applied Physics;2024-03-13
2. Density Functional Theory Study of the Gas Phase and Surface Reaction Kinetics for the MOVPE Growth of GaAs1–yBiy;The Journal of Physical Chemistry A;2020-02-06
3. The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers;Semiconductor Science and Technology;2018-10-12
4. Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures;Physical Review Applied;2018-10-09
5. Theory and design of InxGa1−xAs1−yBiymid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3μm on InP substrates;Semiconductor Science and Technology;2018-08-07
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