Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Direct evidence for the site of substitutional carbon impurity in GaAs
2. Mechanism of carbon incorporation in MOCVD GaAs
3. Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition
4. Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)Boriented GaAs substrates
5. The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy
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