Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, United States
2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b03734
Reference68 articles.
1. Dislocations in strained-layer epitaxy: theory, experiment, and applications
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