Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system-Reference-Cited by-同舟云学术

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

Published:2017-06-28 Issue:8 Volume:254 Page:1600737
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Nagamatsu Kentaro¹,Nitta Shugo¹,Ye Zheng²,Nagao Hirofumi³,Miki Shinichi³,Honda Yoshio¹,Amano Hiroshi¹⁴⁵

Affiliation:

1. Institute of Materials and Systems for SustainabilityNagoya UniversityFuro‐cho, Chikusa‐kuNagoya 464‐8603AichiJapan

2. Department of Electrical Engineering and Computer ScienceNagoya UniversityFuro‐cho, Chikusa‐kuNagoya 464‐8603AichiJapan

3. MSI.TOKYO, INC.1‐3‐10, TobitakyuChofu 182‐0036TokyoJapan

4. Akasaki Research CenterNagoya UniversityFuro‐cho, Chikusa‐kuNagoya 464‐8603AichiJapan

5. Venture Business LaboratoryNagoya UniversityFuro‐cho, Chikusa‐kuNagoya 464‐8603AichiJapan

Funder

Japan Science and Technology Agency

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201600737

Reference29 articles.

1. Growth and characterization of GaN PiN rectifiers on free-standing GaN

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5. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

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