An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth-Reference-Cited by-同舟云学术

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An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

Published:2022-10 Issue: Volume:599 Page:153935
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Boero Mauro,My Bui Kieu,Shiraishi Kenji,Ishisone Kana,Kangawa Yoshihiro,Oshiyama Atsushi

Funder

Institute of Solid State Physics, Chinese Academy of Sciences

Grand Équipement National De Calcul Intensif

Takase Scholarship Foundation

Ministry of Education, Culture, Sports, Science and Technology

National Institutes of Natural Sciences

University of Tokyo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. R.-H. Horng, D.-S. Wuu, C.-F. Lin, C.-F. Lai, Recent development of fabrication technologies of nitride LEDs for performance improvement, in: JianJang Huang, Hao-Chung Kuo, Shyh-Chiang Shen (Eds.), Woodhead Publishing Series in Electronic and Optical Materials, Nitride Semiconductor Light-Emitting Diodes (LEDs) (Second Edition), Woodhead Publishing, 2018, 209-241, ISBN 9780081019429.

2. 1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability;Zhou;IEEE Trans. Power Electron.,2022

3. Carrier mobility model for GaN;Mnatsakanov;Solid-State Electron.,2003

4. Nobel Lecture: Fascinated journeys into blue light;Akasaki;Rev. Mod. Phys.,2015

5. H. Amano, H. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation, Rev. Mod. Phys.87 (2015) 1133-1138.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Augmentation of the electron counting rule with Ising model;Journal of Applied Physics;2024-06-11

2. Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor;CrystEngComm;2023

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