Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337254
Reference28 articles.
1. High purity GaAs prepared from trimethylgallium and arsine
2. Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
3. Effect of V/III variation on the optical properties of GaAs and AlxGa1−xAs grown by metalorganic chemical vapor deposition
4. Residual shallow acceptors in GaAs layers grown by metal‐organic vapor phase epitaxy
5. The growth and characterization of high quality MOVPE GaAs and GaAlAs
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