Effect of V/III variation on the optical properties of GaAs and AlxGa1−xAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94144
Reference14 articles.
1. Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
2. High purity GaAs prepared from trimethylgallium and arsine
3. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
4. The incorporation and characterisation of acceptors in epitaxial GaAs
5. Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAs
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1. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
2. Temperature Dependence of Carbon Incorporation in AlxGa1-xAs Grown by Metalorganic Chemical Vapor Deposition (MOCVD);MRS Proceedings;1994
3. SiH4-doped AlGaAs epilayers formed by MOCVD;Journal of Crystal Growth;1992-08
4. Use of phenylarsine in the atmospheric pressure metal organic chemical vapour deposition of GaAs on Si(100);Journal of Materials Chemistry;1991
5. Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1988-05
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