Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. SINGLE‐CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
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4. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
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