GaAs m.e.s.f.e.t. prepared by organometallic chemical vapour deposition
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19790076?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 3 Metalorganic Vapor Phase Epitaxy for High-Quality Active Layers;Very High Speed Integrated Circuits: Heterostructure;1990
2. Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
3. GaAs MESFET's made by ion implantation into MOCVD Buffer layers;IEEE Electron Device Letters;1984-01
4. Solid Composition and Growth Rate of Ga1-xAlxAs Grown Epitaxially by MOCVD;Japanese Journal of Applied Physics;1983-09-20
5. The growth of Magnesium-doped GaAs by the Om-Vpe process;Journal of Electronic Materials;1983-05
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