SiH4-doped AlGaAs epilayers formed by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Donor energy level for Se in Ga1−xAlxAs
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3. MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine;Journal of Crystal Growth;2006-03
4. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
5. Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C;Journal of Crystal Growth;1997-08
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