MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Efficient pump wavelengths of erbium-doped fibre optical amplifier
2. Er/sup 3+/-doped fiber amplifier pumped by 0.98 mu m laser diodes
3. Single-frequency diode-pumped erbium lasers at 1.55 and 1.64 [micro sign]m
4. Advantages of InGaAsP separate confinement layer in 0.98 μm InGaAs/GaAs/InGaP strained DQW lasers for high power operation at high temperature
5. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-strain InGaAs/GaAs quantum well grown by MOCVD;Chinese Optics Letters;2014
2. Growth Interruption Effects of GaAs/AlGaAs Quantum Wells Grown by Molecular Beam Epitaxy;Journal of the Korean Vacuum Society;2010-09-30
3. The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods;Journal of Crystal Growth;2009-09
4. The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods;Journal of Crystal Growth;2008-05
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