Energy level of the Si-related DX-center in (AlyGa1−y)1−xInxAs-Reference-Cited by-同舟云学术

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Energy level of the Si-related DX-center in (AlyGa1−y)1−xInxAs

Published:2015-03-09 Issue:10 Volume:106 Page:102104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Heckelmann Stefan¹,Lackner David¹,Bett Andreas W.¹

Affiliation:

1. Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg, Germany

Funder

Bundesministerium fÃ¼r Wirtschaft und Energie (Federal Ministry for Economic Affairs and Energy)

Deutsche Bundesstiftung Umwelt (German Federal Environmental Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914317

Reference24 articles.

1. Deep donor levels (DXcenters) in III‐V semiconductors

2. DX Centers in Other III-V Alloys

3. Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition

4. Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD

5. SiH4-doped AlGaAs epilayers formed by MOCVD

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