Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor deposition

Published:1988-05 Issue:3 Volume:17 Page:239-241
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Waters R. G.,Hill D. S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02652184.pdf

Reference6 articles.

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2. G. B. Stringfellow, J. Cryst. Growth53, 42 (1981).

3. R. J. Menna, S. Y. Narayan, R. T. Smith, M. S. Abrahams and C. W. Magee, RCA Review47, 579 (1986).

4. D. S. Hill, D. K. Wagner, R. G. Waters , P. L. Tihanyi , A. J. Roza , B. J. Vollmer, K. J. Bystrom and T. S. Guido, Topical Meeting on Semiconductor Lasers (Southwest Optics '87 Conference), Albuquerque, NM, paper WB8 (1987).

5. W. T. Tsang, Appl. Phys. Lett.39, 134 (1981).

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