Residual shallow acceptors in GaAs layers grown by metal‐organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332712
Reference23 articles.
1. Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique
2. A new method for the growth of GaAs epilayer at low H2 pressure
3. High purity GaAs prepared from trimethylgallium and arsine
4. Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System
5. An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium
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