SiGe wires and dots grown by local epitaxy-Reference-Cited by-同舟云学术

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SiGe wires and dots grown by local epitaxy

Published:1995-05 Issue: Volume:150 Page:1060-1064
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Brunner J.,Schittenhelm P.,Gondermann J.,Spangenberg B.,Hadam B.,Köster T.,Roskos H.G.,Kurz H.,Gossner H.,Eisele I.,Abstreiter G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Selective Epitaxial Deposition of Silicon

2. High Definition Mesa Growth by Silicon MBE

3. Local silicon molecular beam epitaxy with microshadow masks

4. Excitonic luminescence from locally grown SiGe wires and dots

5. Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laterally self-ordered silicon-germanium islands with optimized confinement properties;Applied Physics Letters;2013-08-05

2. Ge dot organization on Si substrates patterned by focused ion beam;Applied Physics Letters;2004-12-27

3. Silicon-based nanostructures;Nanostructured Materials and Nanotechnology;2002

4. Optical and structural properties of Si/SiGe wires grown on patterned Si substrates;Thin Solid Films;2000-12

5. Structural and optical properties of Si/Si 1−x Ge x wires;Thin Solid Films;2000-07

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