High Definition Mesa Growth by Silicon MBE-Reference-Cited by-同舟云学术

High Definition Mesa Growth by Silicon MBE

Published:1991 Issue: Volume:220 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Hammerl E.,Wittmann F.,Messarosch J.,Eisele I.,Huber V.,Oppolzer H.

Abstract

ABSTRACTA novel epitaxial growth method for fabricating mesa patterns on a micrometer scale has been investigated. Electrical devices have been prepared employing this technique and their characteristics are in good agreement with those of mesa etched devices.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference9 articles.

1. Silicon molecular beam epitaxy

2. [5] Cerva H. (private communication)

3. Signalverarbeitende Dioden

4. Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study

5. Planar-doped barriers in GaAs by molecular beam epitaxy

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