Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. High speed SiGe heterobipolar transistors
2. p-type Ge-channel MODFETs with high transconductance grown on Si substrates
3. High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si
4. Instability of a GexSi1−xO2film on a GexSi1−xlayer
5. Room temperature electroabsorption in a Ge/sub x/Si/sub 1-x/ PIN photodiode
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