High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si-Reference-Cited by-同舟云学术

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High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

Published:1994-04-30 Issue:Part 1, No. 4B Volume:33 Page:2412-2414
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nayak Deepak K.,Woo Jason C. S.,Park Jin S.,Wang Kang L.,MacWilliams Ken P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling, Power Consumption, and Mobility Enhancement Techniques;Computational Microelectronics;2010-09-10

2. Leakage currents and dielectric breakdown of Si1−x−yGexCy thermal oxides;Microelectronics Reliability;2008-10

3. High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition;Optical Materials;2003-07

4. SiGe field effect transistors;Materials Science and Engineering: R: Reports;1999-05

5. Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices;Journal of Crystal Growth;1998-01

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