1. Si-based resonant inter- and intraband tunneling diodes
2. High-mobility Si and Ge structures
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4. Molecular Beam Epitaxy
5. H. Jorke. In Properties of Silicon Germanium and SiGe:Carbon, E. Kasper and K. Lyutovich, Eds. INSPEC, Institution of Electrical Engineers, London, 2000, p.287.