Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

Published:1992-12 Issue:1-2 Volume:222 Page:27-29
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Brunner J.,Menczigar U.,Gail M.,Friess E.,Abstreiter G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure

2. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys

3. Electroluminescence and photoluminescence from Si1−xGexalloys

4. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy

5. Photoluminescence of Si1-xGex/Si Quantum Well Structures

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1. Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe-Based Alloy Quantum Well;Japanese Journal of Applied Physics;2002-12-15

2. Structural and photoluminescence properties of Ge Si ultra-thin films and heterostructures;Journal of Physics: Condensed Matter;2002-08-22

3. Low-temperature photoluminescence in SiGe single quantum wells;Applied Physics A: Materials Science & Processing;1998-01-01

4. Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices;Journal of Crystal Growth;1998-01

5. SiGe Quantum Structures;Mesoscopic Physics and Electronics;1998

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