Laterally self-ordered silicon-germanium islands with optimized confinement properties-Reference-Cited by-同舟云学术

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Laterally self-ordered silicon-germanium islands with optimized confinement properties

Published:2013-08-05 Issue:6 Volume:103 Page:063105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zabel Thomas,Sircar Narayan,Hauke Norman,Zweck Josef,Döblinger Markus,Kaniber Michael,Finley Jonathan J.,Abstreiter Gerhard,Arakawa Yasuhiko,Bougeard Dominique

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4818331

Reference26 articles.

1. Optical Integrated Circuits: A Personal Perspective

2. Silicon-Based Light Sources for Silicon Integrated Circuits

3. III-V/Si hybrid photonic devices by direct fusion bonding

4. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

5. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

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1. Nucleation versus instability race in strained films;Physical Review Materials;2017-10-09

2. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures;Journal of Applied Physics;2015-05-28

3. Experimental investigation of the optical spin-selection rules in bulk Si and Ge/Si quantum dots;Physical Review B;2014-01-10

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