The effect of growth pause on the composition of InGaP/GaAs Heterointerfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
2. Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy
3. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
4. Effects of growth interruption on structure of MBE grown GaAs/AlAs hetero-interfaces studied by x-ray diffraction
5. Improved assessment of structural properties ofAlxGa1−xAs/GaAs heterostructures and superlattices by double-crystal x-ray diffraction
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1. Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures;Crystal Research and Technology;2005-11
2. Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE;Journal of Crystal Growth;2000-02
3. Interface control and band offset at the Ga[sub 0.52]In[sub 0.48]P on GaAs heterojunction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements;Applied Physics Letters;1999-02
5. Anisotropic interfacial strain in InP/InGaAs/InP quantum wells;Journal of Applied Physics;1998-11-15
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