Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123102
Reference13 articles.
1. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
2. dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
3. Gas source molecular beam epitaxial growth and device applications in In0.5Ga0.5P and In0.5Al0.5P heterostructures
4. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
5. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
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