Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. A new GaAs, GaP, and GaAsxP1−x vacuum deposition technique using arsine and phosphine gas
2. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
3. Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy
4. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
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1. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022
2. Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion;Journal of Electronic Materials;2003-09
3. Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell;Journal of Applied Physics;2000-06
4. Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell;Journal of Crystal Growth;1999-07
5. Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-05
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